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Study on Transferring Extraneous Gene to Arabidopsis Thaliana by Carbon Ion Beam Irradiation
Author(s): 
Pages: 326-331
Year: Issue:  5
Journal: ACTA LASER BIOLOGY SINICA

Keyword:  碳离子束辐照损伤拟南芥转基因;
Abstract: 采用700keV或4.0 MeV碳离子束辐照拟南芥种子, 通过对样品的显微摄影, 发现随着辐照剂量的增加, 碳离子束对种子表面的损伤逐渐加剧, 特别是在4.0 MeV碳离子束辐照下, 当剂量达到1×1014ions*cm-2后, 种皮局部逐渐被刻蚀殆尽, 甚至造成种皮局部破裂.对拟南芥种子进行台盼蓝染色后的显微观测显示, 碳离子束辐照可以导致拟南芥种皮细胞着染, 在剂量较大的情况下, 部分皮下细胞也可着染, 表明碳离子束可作用到皮下细胞, 为外源基因提供导入的通道. GUS基因导入后的组织化学检测表明:质粒pCAMBIA1301能够进入4.0MeV碳离子束辐照后的拟南芥种子, 并在种子和幼芽中获得瞬间表达.
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