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dun hua mo kang fu zhao de yan jiu
Pages: 17-20
Year: Issue:  4
Journal: 天津市科委

Keyword:  passivated thin film interface Flat band Voltage;
Abstract: The γ radiation specific property of some different passivated thin films is studied, the result indicates that simple SiO 2 film can't resist γ ray, and that SiO 2 film which thickness is 100nm with polyimide can resist γ ray when the radiation dosage is lower than 10 6 rad(Si). It is indicated that tetramechy ammonium hydroxide can affect Si SiO 2 interface also.
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