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gao xiao 94ghz0.15 m ingaas/inalas/inp dan pian gong lv hemt fang da qi
Author(s): 
Pages: 37-39
Year: Issue:  3
Journal: Radar & Ecm

Keyword:  InGaAs/InAlAs输出功率功率HEMT功率附加效率击穿电压固态功率放大器微波集成电路最大电流密度高截止频率氮化硅;
Abstract: 介绍了采用栅长为0.15μm的钝化In0.53Ga0.47As/In0.52Al0.48As/InPHEMT的高效W波段功率单片微波集成电路(MMIC)。0.15×320μm单级InP功率HEMTMMIC放大器在94GHz时的最大功率附加效率为23%,输出功率为40mW,功率增益为4.9dB。当电源偏置成更高的输出功率时,在94GHz处可得到功率附加效率为20%的54mW的输出功率。这些结果表明,在此频率下,这样的效率和输出功率是迄今为止所有报道中最佳的。
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