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Research of a New Integrated Arrayed 4 Quadrants CMOS Photo-Electric Sensor
Author(s): 
Pages: 928-930
Year: Issue:  5
Journal: ACTA ELECTRONICA SINICA

Keyword:  阵列式象限传感器相关二次采样互补金属氧化物半导体光电传感器动态范围调整二次扫描;
Abstract: 本文介绍了一种用于目标跟踪和坐标定位的新型集成阵列四象限CMOS光电传感器.该传感器采用上华0.6 μm标准CMOS工艺制造,实现了象限传感器与后端信号处理电路的单片集成.该传感器由16×16单元有源光电管阵列,相关二次采样电路和时序控制电路组成.每个有源光电管的大小为60 μm ×60 μm,其感光面积百分比(Fill Factor)为64.5%.通过变频二次扫描的工作模式可将传感器的感光动态范围增大为84dB.传感器的感光灵敏度为2V/lx*s,工作速度根据目标照度可在2ms/帧~64ms/帧范围内调整.
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