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On Genetic Mechanism of Low Resistivity Reservoirs in Wellblock-H
Author(s): 
Pages: 513-515
Year: Issue:  6
Journal: WELL LOGGING TECHNOLOGY

Keyword:  孔喉结构束缚水饱和度矿化度低电阻率油层;
Abstract: 通过对长庆油田H井区正常油区与低电阻率油区的实验资料、电性资料、试油结果的分析对比,确定了形成低电阻率的主要因素是高总孔隙度、高含水饱和度,为低电阻率储层测井解释提供参考依据.为考查高总孔隙度、高含水饱和度对电阻率的影响,根据实验结果分别选取一个正常油区和低电阻率油区的孔隙度和含水饱和度值.经计算可知,高总孔隙度和高含水饱和度可使电阻率下降12.73 Ω·m.
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