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The Improvement of Extractive Emission in InGaAlP Quantum Wells Light Emitting Diodes by Microstructures
Author(s): 
Pages: 331-335
Year: Issue:  3
Journal: ACTA SCIENTIARUM NATURALIUM UNIVERSITATIS PEKINENSIS

Keyword:  发光二极管出光效率InGaAlP量子阱微结构;
Abstract: 针对半导体发光二极管(LED)出光效率低下的问题,提出了一个在LED顶部引入周期性微结构的新设想.根据这一设想,采用简单的微加工技术研制成功带有环形槽微结构的圆台形InGaAlP量子阱LED.结果表明,这种新型LED在竖直方向的出射光强比不带微结构的LED有明显增强.这一成功为改进发光二极管的出光效率提供了新的途径.
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