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ZnO Schottky Barrier UV Photodetector
Author(s): GAO Hui, DENG Hong, LI Yan
Pages: 135-
138
Year: 2005
Issue:
1
Journal: CHINESE JOURNAL OF LUMINESCENCE
Keyword: 六棱微管ZnO; 肖特基势垒结; 紫外光探测器; I-V特性; 光响应度; 量子效率;
Abstract: 以p-Si(111)为衬底,用水热法首次制得六棱微管ZnO.并以此为有源区利用平面磁控溅射技术沉积得到Ag叉指状电极,从而制作了Ag/n-ZnO肖特基势垒结紫外探测器.对该紫外光探测器的暗电流和365nm波长光照下的光电流、光响应和量子效率进行了测试.测试结果表明:Ag和ZnO六棱管间已形成肖特基接触,其有效势垒高度为0.35 eV.无光照时,暗电流很小,当用λ=365 nm的光照射Ag/n-ZnO肖特基结时,在5,9 V偏压时,光生电流分别为25.6,57.9μA.Ag/n-ZnO紫外探测器有明显的光响应特性和较高的量子效率,在366 nm波长处,光响应度达到最大值0.161 A/W,量子效率为54.7%.
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