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Simulation and Measurement of Thermal Flow Fieldin Plasma Enhanced Chemical Vapor Deposition Reactor
Author(s): 
Pages: 1325-1333
Year: Issue:  11
Journal: Vacuum Science and Technology

Keyword:  Vacuum SemiconductorFlow and thermal fieldParameter controlVariable structure chamber;
Abstract: The distributions of the thermal flow field,in the industrial plasma enhanced chemical vapor deposition reactors,were mathematically modeled,theoretically analyzed,numerically simulated and experimentally measured. The impact of the substrate temperature,gas flow-rate and outlet pressure on the profiles of the temperature /pressure was investigated. The preliminary results show that the substrate temperature,gas flow-rate and outlet’s pressure strongly affect the temperature / pressure distributions. For example,the high substrate temperature distributes in a slowly decreasing radial profile but in a rapidly decreasing axial profile,dropping to 27℃ at 8. 5 cm above the substrate; as the gas flow-rate increased,the temperatures,at 2 cm above the substrate,above / below the 2nd showerhead,slowly decreased. In contrast,as the outlet pressure increased,the temperature,2 cm above the substrate,decreased; accompanied by the increasing temperatures around the 2ndshowerhead. The simulated and measured results were in good agreement.
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