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Synthesis and Properties of F/Ga Co-Doped ZnO Thin Films on Flexible Substrate
Author(s): 
Pages: 1334-1341
Year: Issue:  11
Journal: Vacuum Science and Technology

Keyword:  Transparent conducting filmsZnO doped with Ga and FPET flexible substrateorthogonal design;
Abstract: The Ga and F co-doped ZnO thin films( GFZO) were synthesized by pulsed laser depositionon flexible substrate of polyethylene terephthalate( PET). The effect of the synthesis conditions,including but not limited to the laser power,substrate temperature,O2flow-rate,deposition time and contents of Ga and F,on the microstructures and optical/electrical properties of the GFZO films were investigated with X-ray diffraction,atomic force microscopy,ultra violet visible spectroscopy and Hall effect measurement. The growth conditions were optimized in orthogonal experimental design method. The results show that the GFZO films’ properties strongly depend on the Gacontent and deposition time but weakly on the substrate temperature and O2 flow-rate. To be specific,synthesized at100℃ and a Ga-content of 1. 0%( at.) for 60 min,the GFZO coating has highest transmittance of 86. 48% and a resistivity of 4. 82 × 10-3Ω·cm.
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