Synthesis and Properties of F/Ga Co-Doped ZnO Thin Films on Flexible Substrate
Author(s): Zhao Yue, Du Xiaoqin, Yan Zhong, Pan Yang, Wu Xiaojing, Department of Materials Science, Fudan University
Pages: 1334-1341
Year: 2016 Issue: 11
Journal: Vacuum Science and Technology
Keyword: Transparent conducting films; ZnO doped with Ga and F; PET flexible substrate; orthogonal design;
Abstract: The Ga and F co-doped ZnO thin films（ GFZO） were synthesized by pulsed laser depositionon flexible substrate of polyethylene terephthalate（ PET）. The effect of the synthesis conditions,including but not limited to the laser power,substrate temperature,O2flow-rate,deposition time and contents of Ga and F,on the microstructures and optical/electrical properties of the GFZO films were investigated with X-ray diffraction,atomic force microscopy,ultra violet visible spectroscopy and Hall effect measurement. The growth conditions were optimized in orthogonal experimental design method. The results show that the GFZO films’ properties strongly depend on the Gacontent and deposition time but weakly on the substrate temperature and O2 flow-rate. To be specific,synthesized at100℃ and a Ga-content of 1. 0%（ at.） for 60 min,the GFZO coating has highest transmittance of 86. 48% and a resistivity of 4. 82 × 10-3Ω·cm.
Pages: 1334-1341
Year: 2016 Issue: 11
Journal: Vacuum Science and Technology
Keyword: Transparent conducting films; ZnO doped with Ga and F; PET flexible substrate; orthogonal design;
Abstract: The Ga and F co-doped ZnO thin films（ GFZO） were synthesized by pulsed laser depositionon flexible substrate of polyethylene terephthalate（ PET）. The effect of the synthesis conditions,including but not limited to the laser power,substrate temperature,O2flow-rate,deposition time and contents of Ga and F,on the microstructures and optical/electrical properties of the GFZO films were investigated with X-ray diffraction,atomic force microscopy,ultra violet visible spectroscopy and Hall effect measurement. The growth conditions were optimized in orthogonal experimental design method. The results show that the GFZO films’ properties strongly depend on the Gacontent and deposition time but weakly on the substrate temperature and O2 flow-rate. To be specific,synthesized at100℃ and a Ga-content of 1. 0%（ at.） for 60 min,the GFZO coating has highest transmittance of 86. 48% and a resistivity of 4. 82 × 10-3Ω·cm.
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