Author(s): ZHANG Yaling, LI Zhigang
Pages: 72-75
Year: 2016 Issue:  10
Journal: Electric Drive
Keyword:  insulated gate bipolar transistor(IGBT); temperature recycle; lifetime prediction models;
Abstract: Insulated gate bipolar transistor(IGBT)often works in overheating and large temperature fluctuating conditions,when the heating damage accumulates to a certain degree,the failure of IGBT module is most likely occur, which leads to huge losses in electric system. If we can estimate the life of the module according to lifetime prediction model,the module can be replaced before it is going to fail,so it is possible to avoid losses caused by sudden failure of the module. Therefore,the IGBT temperature cycling test was done and the case temperature was detected simultaneously,then researched the relationship between IGBT lifetime and case temperature which was more accessible. Based on the existing life models,provided an improved lifetime prediction model which is proved having the higher accuracy.