Author(s): GAO Run, NIU Chun-hui, Li Xiao-ying, College of Instrumentation Science &photoelectric Engineering, Beijing Information Science & Technology University
Pages: 5-9
Year: 2016 Issue:  9
Journal: Laser Journal
Keyword:  laser jamming; CCD image sensor; CMOS image sensor; mechanism analysis;
Abstract: In order to research the mechanism of laser jamming image sensor,the experiment of laser with 632 nm wavelength jamming an array CCD sensor and an array CMOS sensor is performed. Through digital image processing,horizontal maximum width and vertical maximum width of jamming area are extracted with different laser power,and then the reason of jamming difference is explained from the inner structure of CCD and CMOS. The relationship between maximum width of jamming area and laser power can be derived from the laser intensity relation,and based on this relationship,fitting curve of CCD horizontal maximum width and CMOS horizontal and vertical maximum width can be acquired under different laser power. The fitting results and experimental data agree well,which illustrate that mainly cause of CCD horizontal direction and CMOS horizontal and vertical direction by laser jamming is due to the uplifting of the gaussian beam. Through the experiment,it can be concluded that the process of CCD vertical crosstalk can be divided into two stages: the initial stage may be caused by the electron tunneling,and the latter is mainly caused by the saturation diffusion of the carriers.