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The Effect of Magneticfield Annealing on Top Pinning Spin Valve Magneto-Resistor Property
Author(s): 
Pages: 61-64
Year: Issue:  5
Journal: Journal of Gansu Sciences

Keyword:  Spin valveTop pinningMagneticfield annealingGiant magneto resistance;
Abstract: By method of high vacuum DC magnetron sputtering,the top pinning spin valve which structure is Si/SiO 2/Ta(3.2 nm)/Ni8 1 Fe1 9 (18.7 nm)/Co90 Fe1 0 (3.9 nm)/Cu(2.5 nm)/Co90 Fe1 0 (22.4 nm)/Ir22 Mn78 (23.8 nm)/Ta(3.6 nm)is prepared,and this text studied the effect of magneticfield annealing temperature and time on GMR of spin valve.The result shows that with temperature and time increasing,GMR first in-creases and then goes down,and the optimized annealing temperature is 275 ℃,time 15 min.Analyze the cause of this trend.Under optimized annealing condition,the prepared spin valve GMR reaches 6.0%,coer-civity of free layer(H c )is 1 1 Oe,the exchange field (H ex )is about 108 Oe.
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