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Fabrication of Thin Film Transistor with High Performance HfO2 Coatings Synthesized at Low Temperature
Pages: 862-865
Year: Issue:  8
Journal: Vacuum Science and Technology

Keyword:  HfO2Gate dielectric layerElectron beam evaporationAnnealingTFT;
Abstract: The Hf O2 coating,synthesized by electron beam evaporation and annealed in O2 or N2atmosphere on the ITO-coated glass substrate was used as the grid dielectric material in fabrication of thin film transistor( TFT). The influence of the thickness and annealing atmosphere,on the phase-structures and electrical properties of the Hf O2 coatings was investigated with X-ray diffraction. The results show that the annealing strongly affects the microstructures and electrical properties. For example,annealed at 450 ℃ for 30 min in O2,the leakage current sharply increased,possibly because the boundaries between the monoclinic,cubic and orthorhombic-phased grains resulted in the formation of leakage channel. In contrast,an annealing in N2 inhabited such grain-boundary formation and crystallization,reducing the leakage current by more than 10 times. We suggest that the Hf O2 film be a promising TFT grid material because of its high dielectric constant and low leakage current.
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