High Spin-polarization Currents in Spin-semiconducting Nanoscale Thermoelectric Material Devices
Author(s): ZHOU Xilu, CHEN Yingshuang, LUO Siyu, WANG Hailu, YU Hailin, FENG Jinfu, LIU Yushen
Pages: 10-13,22
Year: 2016 Issue: 4
Journal: Journal of Changshu Institute of Technology
Keyword: low-dimensional thermoelectric materials; spin-semiconducting property; high spin-polarization cur-rents;
Abstract: Exploiting high spin-polarization device is one of the major objectives in the field of spintronics. In this paper, a thermospin device is designed to generate the high spin-polarization currents based on the first-principles method. The device consists of the source electrode (B-doped graphene nanoribbon), the drain electrode (graphene nanoribbon), and the central scattering region (the carbon atomic chain). In contrast to the undoped case, the spin-up current induced by the temperature difference can be enhanced by 100 times in the high temperature region, and meanwhile the current spin-polarization can reach 1. Moreover, the spin current is larger than the charge current in the high-temperature region, which is ascribed to the spin-semiconducting property of the device after the B doping.
Pages: 10-13,22
Year: 2016 Issue: 4
Journal: Journal of Changshu Institute of Technology
Keyword: low-dimensional thermoelectric materials; spin-semiconducting property; high spin-polarization cur-rents;
Abstract: Exploiting high spin-polarization device is one of the major objectives in the field of spintronics. In this paper, a thermospin device is designed to generate the high spin-polarization currents based on the first-principles method. The device consists of the source electrode (B-doped graphene nanoribbon), the drain electrode (graphene nanoribbon), and the central scattering region (the carbon atomic chain). In contrast to the undoped case, the spin-up current induced by the temperature difference can be enhanced by 100 times in the high temperature region, and meanwhile the current spin-polarization can reach 1. Moreover, the spin current is larger than the charge current in the high-temperature region, which is ascribed to the spin-semiconducting property of the device after the B doping.
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