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Synthesis and Characterization of Microstructures of Hydrogenated Amorphous Silicon by Ion Beam Assisted Sputtering
Pages: 654-658
Year: Issue:  6
Journal: Vacuum Science and Technology

Keyword:  Hydrogen-ion-beam-assisted sputteringAmorphous silicon thin filmsStructureHydrogen-ion currents;
Abstract: The device-grade,hydrogenated amorphous silicon(a-Si:H) thin films were synthesized by ion beam assisted magnetron sputtering,on substrates of glass and Si wafer.The effect of the hydrogen ion current on the microstructures of the a-Si:H thin films was investigated with Raman spectroscopy,Fourier transform infrared spectroscopy,and spectroscopic ellipsometry.The results show that the hydrogen ion current has a major impact on the microstructure factor and density of defect.To be specific,as the ion current increased from 0.0 to 25 mA,the microstructure factor of the a-Si:H thin films changed in an decrease-increase mode,being minimized at a ion current of 5 mA.Deposited at 5 mA,the a-Si:H thin films with a lowest density of defect state,displayed the properties,including a sub-bandgap absorption coefficient of 0.7 cm-1 at 0.8 eV,a surface hydrogen density of 10.2%(at),a microstructure factor of 0.47 and an optical band gap of 2.02 eV.
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