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Synthesis and Characterization of Highly Oriented Anatase-Phased TiO2 Thin Film by Atomic Layer Deposition
Author(s): 
Pages: 510-514
Year: Issue:  5
Journal: Chinese Journal of Vacuum Science and Technology

Keyword:  ALDAnatase TiO2AnnealingBand gap;
Abstract: The highlyoriented,anatase-phased Ti O2 thin filmswere synthesized by atomic layer deposition(ALD) on substrates of silicon and quartz glass. The effect of the annealing temperature in N2 atmosphere on the microstructures,phase-structures and optical properties was investigated with X-ray diffraction,atomic force microscopy,field emission scanning electron microscopy and ultraviolet-visible transmission spectroscopy. The results show that the annealing temperature strongly affects the microstructures and optical bandgap of the ALD anatase-phased Ti O2 thin film. To be specific,an increase of the annealing temperature from 500 to 600℃ roughened the surfaces,increased the grain size,slightly widened the optical bandgap,decreased the transmittance,and blue-shifted the absorption edge of the as-deposited,highly oriented,anatase-phased Ti O2 thin films. Possible mechanisms responsible for the observation were also tentatively discussed.
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