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Research on Conductive Mechanism of front Side Silver Paste for High Sheet Resistance Solar Cell
Author(s): 
Pages: 23-27
Year: Issue:  6
Journal: Electrical Engineering Materials

Keyword:  高方阻传输线接触电阻腐蚀坑隧道效应;
Abstract: 分别研发了适用高方阻和低方阻晶硅太阳能电池的正面银浆A和B,并将两者应用到尺寸为156mm×156mm,方块电阻分别为60 Ω/sq、85 Ω/sq的多晶硅电池片上.结果显示两种银浆制备的60 Ω/sq多晶硅电池片性能十分接近,而85 Ω/sq多晶硅电池片性能差异明显.在利用A、B两种浆料制备的85 Ω/sq多晶硅电池片中,B的Rs较A高8.15 mΩ,FF低8.1%,Eff低2.28%,接触电阻率是A的5倍以上.并将A、B两种银浆印刷于已经扩散、镀膜的抛光单晶片上,烧结后再使用HNO3、HF依次腐蚀银和玻璃,观察玻璃、硅界面的状态.结果表明A在硅上留下的腐蚀坑较B的数量多、分布均匀、腐蚀深度均一,且A的玻璃层厚度更小,对氮化硅的开孔率更高.
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