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The Preparation of Three-dimensional Porous Silicon by Metal-assisted Chemical Etching
Author(s): 
Pages: 54-59
Year: Issue:  5
Journal: Journal of Putian Univeristy

Keyword:  金属诱导化学腐蚀多孔硅纳米线多晶硅粉;
Abstract: 以工业级多晶硅粉为原料,采用金属银诱导化学腐蚀的方法制备出三维多孔硅纳米线结构.系统分析了化学腐蚀硅粉的机理,特别是金属银催化剂对制备过程的影响.实验对比了不同腐蚀条件(腐蚀液温度、沉积银溶液浓度、光照条件等)对样品结构形貌和比表面积的影响.研究发现,腐蚀液温度升高有利于腐蚀过程中化学反应的进行;而沉积银溶液中的AgNO3浓度适中,有利于样品表面形成分布均匀的孔洞;外部光照可增加光生载流子,促进反应进行,加快腐蚀速率,从而提高样品比表面积.通过优化腐蚀条件,得到形貌较优、比表面积较大(530cm2·g-1)的三维多孔硅纳米线结构.
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