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POLYCRYSTAL Ll INE SOLAR CELL WITH DOUBLE SiN_x∶H ANTI-REFLECTION FILM AND ITS MODULES PERFORMANCE
Author(s): 
Pages: 108-112
Year: Issue:  1
Journal: Acta Energiae Solaris Sinica

Keyword:  double layer SiNx∶H filmpassivationtube PECVDpower loss;
Abstract: Double layer SiNx∶ H film which has outstanding passivation and anti-reflection performance was manufactured through depositing on polycrystalline wafer by tube PECVD. The refractive index of bottom and top layer are 2.35 and 2.01; the thicknesses of the two layers are 17 nm and 67 nm, respectively. The refractive index is controlled by adjusting Si/N ratio in reactive gas: as Si/N ratio while preparing bottom layer increases, the reflectance becomes lower, and Jscof solar cell increases first but then decreases. Compared with single layer SiNx∶H film, the reflectance curve, external quantum efficiency(EQE)and electrical properties show that the reflectance in short-wave(300-650nm) spectral is much lower than single layer. The spectral response of solar cell is slightly better than single layer at 680-950 nm; Uocand Iscof double layer solar cell improve greatly while the photo-electric conversion efficiency increases by 0.193%. Moreover, the power loss of double layer solar cell modules is slightly lower than the single layer cell modules.
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