Author(s): Luo Jie-Xin a)b), Chen Jing a), Zhou Jian-Hua a)b), Wu Qing-Qinga)b), Chai Zhan a), Yu Tao a)c), and Wang Xi a) a) State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050, China b) Graduate University of Chinese Academy of Sciences, Beijing 100049, China c) The Key Laboratory of Thin Films of Jiangsu, Departments of Physics, Soochow University, Suzhou 215006, China
Pages: 477-482
Year: 2012 Issue:  5
Journal: Chinese Physics B
Keyword:  floating body effect; hysteresis effect; back gate bias; partially depleted(PD) SOI;
Abstract: The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted(PD) silicon-on-insulator(SOI) MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-μm PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall(SRH) recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs.