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Research on short-wavelength HgCdTe film growth on silicon composite substrate by molecular beam epitaxy growth
Pages: 646-649
Year: Issue:  6
Journal: Laser & Infrared

Keyword:  Si based HgCdTeMBESW-HgCdTeSW/MW dual-band HgCdTe;
Abstract: Based on the fabrication technology of MW HgCdTe,the recent research progress on molecular beam epitaxy growth of SW-HgCdTe on Si composite substrate is reported.Through the original temperature calibration,the use of in-situ measurements such as RHEED and pyrometry,the temperature-controlling figure profile of MW-MCT,a cus-tomized temperature-controlling figure profile for SW-MCT was built and optimized.The defects density of optimized Si based SW-HgCdTe is less than 3000 cm -2 and the surface is smooth and uniform.SW/MW dual-band HgCdTe has been also fabricated based on this technology.
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