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Growth of Hydrogenated Amorphous Silicon Films and Its Properties
Author(s): 
Pages: 94-99
Year: Issue:  S3
Journal: Transactions of Beijing Institute of Technology

Keyword:  non-crystalline solidfilm growthnucleation /microcrystalline siliconamorphous silicon .;
Abstract: One of the important problems for amorphous semiconductors research is to explore for better techniques of material preparation . Hydorgenated amorphous silicon films were prepared by RF plasma chemical vapor deposition . The growth parameters of the hydrogenated amorphous silicon films are here discussed and optimum conditions of the technique described . The flow rate of SiH4 diluted with H, were 100mL/min and the substrate temperature was 250 ℃ . The eflect of the growth parameters on the properties of the hydrogenated amorphous silicon films are discussed . Grains of the hydrogenated amorphous silicon films were observed using the transmission electron microscope . Dynamic theoretical analysis was performed . It is shown that results from theoretical analysis agree with the experi-mental results .
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