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Characterization of Thermal Boundary Resistance of Nano Film Using Frequency-Current Sweeping 3ω Method
Author(s): 
Pages: 861-864
Year: Issue:  4
Journal: Journal of Engineering Thermophysics

Keyword:  nano filmthermal boundary resistancefrequency-sweeping 3ω methodcurrentsweeping 3ω methodnear-surface effect of phonon;
Abstract: Thermal transport through the boundary between nano film and the substrate is the hot-spot and difficulty of thermal management and design in MEMS system.The model of thermal impedance net is estabhshed for frequency-sweeping 3ω method.The thermal boundary resistance between single layer nano film and substrate is experimentally determined for different depth samples by frequency-sweeping 3ω method.The thermal boundary resistance is 0.108 m2·K·MW-1 and 0.066m2·K·MW-1 respectively between ZrO2,SiO2 anti-films and the substrates.It shows that the thermal boundary resistance is free of sweeping frequency and has no scale effect with nano film depth.The experimental and theoretical analysis shows that the near-surface effect of phonon plays a key role in thermal transport through the boundary between nano film and the substrate.
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