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Study on silicon-based MEMS infrared source fabrication and its radiation characteristics
Pages: 276-280
Year: Issue:  3
Journal: Laser & Infrared

Keyword:  MEMS infrared sourcepolycrystalline siliconelectro-optic convert efficiencydrive time;
Abstract: A kind of silicon-based MEMS infrared radiation light source was developed combining with the existing manufacturing process of microelectromechanical system (MEMS).Suspension structure was adopted for the lumines-cent thin film of the light source,and it is mainly composed of micron-sized polycrystalline silicon radiating layer, heavy doped monocrystalline silicon reflecting layer,silicon dioxide protective coating,support layer and metal elec-trodes.Polycrystalline silicon radiating layer was modified through boron ion implantation,and good resistance heating and radiation effect of the polycrystalline silicon radiating layer were achieved.A spectroradiometer was used for tes-ting the radiation spectrum of infrared light source,and its radiation spectrum ranging from 2 to 1 4 μm was obtained.When driving voltage of light source is 5.8 V,the photoelectric conversion efficiency is 9.76%.Turn-on time of the light source is 20 ms,and turn-off time is about 1 0 ms,so the total drive time is 30 ms.
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