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Bias Effect of Growth of SiC Films
Author(s): WANG Mei, TAN Liwen, WANG Bo, ZOU Yunjuan, YAN Hui, YAO Zhenyu
Pages: 107-
109
Year: 2002
Issue:
1
Journal: JOURNAL OF BEIJING POLYTECHNIC UNIVERSITY
Keyword: SiC; RF溅射; 分步偏压;
Abstract: 采用分步偏压溅射法,在Si(100)衬底上制备了高质量的SiC薄膜. 傅里叶红外(FTIR)光谱测试表明,分步偏压法不仅有利于提高SiC薄膜的生长速率,同时也有利于SiC薄膜的成核生长. 通过原子力显微镜(AFM)观察到,单一偏压法制备的样品表面有许多的凹坑,而分步偏压法制备的样品表面则没有出现明显的凹坑. 因此,采用分步偏压溅射法不仅可以提高薄膜的生长速率,同时也可以减小对薄膜的离子刻蚀作用,改善薄膜的质量.
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