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Tuning MR of Spin Valve with Pinned Layer
Author(s): 
Pages: 59-61
Year: Issue:  3
Journal: Journal of Gansu Sciences

Keyword:  Spin valvePinned layerMagnetoelectric resistanceAnneal;
Abstract: 利用高真空直流磁控溅射仪,在玻璃衬底上制备了结构为“Glass/Ta (6 nm)/NiFe(6 nm)/CoFe(1 nm)/Cu(3 nm)/CoFe(t nm)/IrMn(11 nm)/Ta(6 nm)”的自旋阀.研究了被钉扎层CoFe的厚度t对自旋阀磁性能的影响,当t为7.5 nm时自旋阀主要性能达到最佳,并且在外加磁场4 000 Oe下,270℃保温3h退火处理后,自旋阀的GMR值进一步达到5.5%,自由层矫顽力为3Oe,交换偏置场为130 Oe.通过以上的优化方案,可以研制出高磁电阻率、低矫顽力和大交换偏置场的自旋阀.
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