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Analysis of etch pits on InSb(111)A surface
Author(s): 
Pages: 1011-1013
Year: Issue:  9
Journal: Laser & Infrared

Keyword:  InSb腐蚀坑位错损伤层;
Abstract: 采用光学显微镜和光学轮廓仪分析了 InSb 晶片(111)A 面经特定腐蚀剂腐蚀后出现的两种特征腐蚀坑,并通过多次腐蚀试验观察了这两种腐蚀坑形貌的演变。从理论上对腐蚀坑形貌的成因进行了分析,结果显示1类特征腐蚀坑的成因是由于晶片固有的位错缺陷,2类特征腐蚀坑可能是由于晶片表面存在一定深度的损伤层引起的。
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