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Numerical study of TSV Copper Deposition with Multi-additives
Author(s): 
Pages: 239-241
Year: Issue:  4
Journal: Electronics Process Technology

Keyword:  Electric platingCopper filling3D packaging;
Abstract: As a new technology in chip interconnection, TSV is the key technology toward 3D packaging for semiconductor integrated circuit. During the TSV process, copper deposition is one of the important technological steps. A numerical model of TSV deposition with multi-additives is developed and the concentration of accelerator and suppressor is also optimized based on the COMSOL Multiphsics platform. The optimal concentration of accelerator and suppressor is vivificated by experiment.
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