Photoluminescence and Absorption in InGaN Films with InN Segregation
Author(s): Chen Zhizhong, QIN Zhixin, YANG Zhijian, TONG Yuzhen, DING Xiaomin, ZHANG Guoyi
Pages: 38-42
Year: 2001 Issue: z1
Journal: CHINESE JOURNAL OF LUMINESCENCE
Keyword: InGaN; InN分凝; InN量子点; 光致发光;
Abstract: InGaN/GaN layers have been grown under low pressure by metalorganic vapor phase epitaxy on sapphire substrate. X-ray diffraction (XRD), photoluminescence (PL), absorption measurements have been applied to study the radiative recombination mechanisms in the samples.The In composition is determined by XRD measurement using Vegard's law. With In composition increasing, a red-shift of absorption edge and a broad Urbach tail in absorption spectra are observed. Low energy emission is dominant in PL spectra as well, and InGaN peaks in PL excitation spectra are broadened too. We suggest that the piezoelectric effect changed the band structures of InGaN, which affects on the optical absorption behavior. Radiative recombination in the InN quantum dots are attributed to the origin of emission of InGaN layer.
Pages: 38-42
Year: 2001 Issue: z1
Journal: CHINESE JOURNAL OF LUMINESCENCE
Keyword: InGaN; InN分凝; InN量子点; 光致发光;
Abstract: InGaN/GaN layers have been grown under low pressure by metalorganic vapor phase epitaxy on sapphire substrate. X-ray diffraction (XRD), photoluminescence (PL), absorption measurements have been applied to study the radiative recombination mechanisms in the samples.The In composition is determined by XRD measurement using Vegard's law. With In composition increasing, a red-shift of absorption edge and a broad Urbach tail in absorption spectra are observed. Low energy emission is dominant in PL spectra as well, and InGaN peaks in PL excitation spectra are broadened too. We suggest that the piezoelectric effect changed the band structures of InGaN, which affects on the optical absorption behavior. Radiative recombination in the InN quantum dots are attributed to the origin of emission of InGaN layer.
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