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Simulation of Field Emission Characteristics of Gated Carbon Nanotubes Array
Pages: 346-351
Year: Issue:  4
Journal: Chinese Journal of Vacuum Science and Technology

Keyword:  Field emissionImage chargeGated carbon nanotubesFloated sphereContact resistance;
Abstract: The field emission of the gated carbon nanotubes(CNTs)array was modeled with the image charge of floated spheres in the triode configuration,and analytically calculated by evaluating the potential distribution and realistic electric field at the hemispherical ends of CNTs,whichwere assumed to stand vertically on the cathode with an approximated contact resistance. The influence of the contact resistance on the field emission current and electric field at the CNTapexwas investigatedwith F-Nformula.The calculated results showthat the contact resistance significantly reduces the emission current of the gated CNTs array and the realistic field at the CNTapex.A contact resistance higher than 1 MΨ reduces the emission current almost to zero.We suggest that an optimized"gate-hole" distance may improve the field emission properties of the gated CNTs’ array. The calculated results may be of some technological interest.
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