Research on power device IGBT testing method
Author(s): Wang Rui
Pages: 85-87
Year: 2014 Issue: 8
Journal: Electronic Test
Keyword: high voltage; insulated gate bipolar transistor voltage unbalance; test system;
Abstract: With the development of power electronic technology,high voltage power device IGBT has been widely used.Due to the formation of the advantage of IGBT structure,the high voltage converter is particularly important and realize its function in many ways.But IGBT devices will be affected by the environment temperature,driving conditions,loop parasitic parameters in the specific working environment, the actual use effect and gives the design effect differences.Test method for choosing to obtain the characteristic parameters of power device,circuit parameters were detailed research and analysis,it is important to improve the environment of a process of adaptation and application effect of the practical application of power devices.
Pages: 85-87
Year: 2014 Issue: 8
Journal: Electronic Test
Keyword: high voltage; insulated gate bipolar transistor voltage unbalance; test system;
Abstract: With the development of power electronic technology,high voltage power device IGBT has been widely used.Due to the formation of the advantage of IGBT structure,the high voltage converter is particularly important and realize its function in many ways.But IGBT devices will be affected by the environment temperature,driving conditions,loop parasitic parameters in the specific working environment, the actual use effect and gives the design effect differences.Test method for choosing to obtain the characteristic parameters of power device,circuit parameters were detailed research and analysis,it is important to improve the environment of a process of adaptation and application effect of the practical application of power devices.
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