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Optimization of Gate Insulating and Active Layers Deposition and Characteristics of Thin Film Transistors
Pages: 32-37
Year: Issue:  1
Journal: Chinese Journal of Vacuum Science and Technology

Keyword:  Gate insulating layerActive layerDeposition conditions optimizationTFT characteristics;
Abstract: The low speed deposition gate insulating layer(GL),SiN x,and the low speed deposition active layer(AL),a-Si∶ H,of the thin film transistor(TFT) were deposited by plasma enhanced chemical vapor deposition at low deposition rates,on glass substrates.The impacts of the deposition conditions of the GL and AL of the TFT,including the flow rates of SiH 4,NH 3 and H 2,deposition power,pressure,and spacing,on improvement of the I on current of the TFT were evaluated.The optimization of the deposition conditions,such as the deposition power and NH 3 flow rate in GL growth,increased the I on by 32%,and improved the switching ratio,I on/I off,by 40% of the TFT.Possible mechanisms responsible for the improvement were also tentatively discussed.
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