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Simulation of Microcrystalline-Si Films Growth by Very High Frequency Plasma Enhanced Chemical Vapor Deposition
Pages: 91-95
Year: Issue:  1
Journal: Chinese Journal of Vacuum Science and Technology

Keyword:  Very high frequency plasma enhanced chemical vapor depositionMicrocrystalline siliconSimulationOptical emission spectroscopy;
Abstract: The growth of the microcrystalline Si(μc-Si) films by very high frequency plasma enhanced chemical vapor deposition was physically modeled,empirically approximated,and numerically simulated with software packages of Comsol and Chemkin,to understand its growth mechanisms.The impacts of the growth conditions,such as the gas concentrations of SiH 4 and H 2,plasma power,and plasma characteristics,on the microstructures of theμc-Si films were evaluated.The plasma characteristics were monitored online with optical emission spectrometry.The simulated results show that the plasma power had a major impact on the growth.The simulated and measured results,such as the ratio of the SiH 3 and H concentrations,deposition rate,and preferential growth orientation,were found to be in good agreement.
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