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Latest Development of Resistive Switching of NiO Thin Films
Author(s): 
Pages: 1251-1259
Year: Issue:  12
Journal: Vacuum Science and Technology

Keyword:  NiO thin filmsResistive switchingSwitching mechanismDevice structureConductive filament;
Abstract: The latest progress in the development of the resistive switching materials, NiO films in particular, was tentatively reviewed. The discussions centered on the structures of the device made of the resistive switching NiO films, mechanisms responsible for the resistive switching, and impacts of film growth conditions on the resistive switching characteristics. An increasing number of researchers concluded that the formation and rupture of the oxygen vacancy or metallic filaments is responsible for the resistive switching, but the filament formation mechanism remains elusive. Three major conclusions have been well recognized. i). The ON/ OFF ratio can be tuned from 102to 105by insert ing a thin interfacial layer between the cathodic electrode and NiO layer; ii), The doping of high valence impurities results in an increased Ni0 content, favorable for formation of conduct ive filaments; iii). The swit ching threshold voltage significantly depends on the NiO f ilm thickness, annealing temperature and t ime. The development trends in its microstructures characterizat ion, integrat-eddevice fabrication, and high density information storage, were also briefly discussed.
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