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Latest Development of Thin Film Synthesis Technology: Reactive Magnetron Sputtering
Pages: 1229-1236
Year: Issue:  12
Journal: Vacuum Science and Technology

Keyword:  Reactive magnetron sputteringHysteresis effectArcingBerg model;
Abstract: The latest progress made in the thin film growth by reactive magnetron sputtering technology was reviewed in a thought provoking way.The discussions focused on three major topics:i).Approximation and simulation of reactive magnetron sputtering with Berg classic model;ii).The mechanisms responsible for the hysteresis effect and arc discharge; iii).The negative impacts of the hysteresis effect and arc discharge on film deposition and the possible solutions.A novel technique was proposed to cope with the problemsof hysteresis effect and arc discharge.The development trends of the reactive magnetron sputtering in film synthesis were also briefly discussed.
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