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Fabrication and Field Emission Properties of Surface-coduction Electron-Emission Source Based on Planar-Gate Triode with SnO2 Film
Author(s): 
Pages: 1214-1218
Year: Issue:  12
Journal: Vacuum Science and Technology

Keyword:  SnO2 filmPlanar-gateSurface-conductionElectron emission source;
Abstract: The surfaceconduction electronemission source, based on plana-rgate triode with SnO2 film emitters, has been successfully fabricaed on glass substrate by magnetron sputtering, photolithography, and lift-off technology. The microstructures and field emission characteristics were characterized with scanning electron microscopy( SEM) and optical microscopy. Theresults show that the islands of tin oxide, about 100~ 300 nm in diameter, were depost ied at the gap between the cathode and gate electrode, and that the gate voltage was capable of effectively controlling the emission and conduction currents. The electronemission efficiency was found to be around 0. 85% and the maximun brightness could reach 850 cd/ m2, indicating that the SnO2 film may be a good material for fabrication of surfaceconduction electronconduction electronemission source based on planar-gate triode.
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