Author(s): Luan Hexin, Zhuang Daming, Zhang Gong, Liu Jiang, Department of Mechanical Engineering, Tsinghua University
Pages: 459-466
Year: 2013 Issue:  3
Journal: Acta Energiae Solaris Sinica
Keyword:  CIGSe thin film solar cell; annealing; magnetron sputtering; CIGSe;
Abstract: CuIn x Ga1-xS2 thin films were annealed in Se(Selenium) vapor atmosphere,which were deposited by magnetron sputtering from a CIGSe target. SEM,XRD,Raman,XRF and Hall were used to observe and analyze the compositions,microstructures,surface morphologies and electrical properties of the films. After annealing,the performance of CIGSe films was improved. The crystalline quality and electrical properties of annealed CIGSe films will be changed when the annealing temperature was increased to 350℃,and the chalcopyrite structure was obtained when annealing temperatures were increased to 400℃ for 120 minutes. Se could be added into the thin films while annealing in Se vapor atmosphere. Cu-Se phase was formed at the beginning of annealing and was reduced while annealing time was increased. In this word,with optimized parameters,a cell efficiency of 5.44% was achieved.