The server is under maintenance between 08:00 to 12:00 (GMT+08:00), and please visit later.
We apologize for any inconvenience caused
Login  | Sign Up  |  Oriprobe Inc. Feed
China/Asia On Demand
Journal Articles
Laws/Policies/Regulations
Companies/Products
Bookmark and Share
xian xin kuang aln/alxga1-xn/aln liang zi zuo zhong jie mian guang xue sheng zi dui dian zi qian yi lv de ying xiang
Author(s): 
Pages: 367-375
Year: Issue:  4
Journal: Acta Scientiarum Naturalium Universitatis Neimongol

Keyword:  AlN/AlxGa1-xN/AlN quantum wellelectron mobilityquadratic polynomial function fittingternary mixed crystal effect;
Abstract: 对三元混晶纤锌矿AlN/AlxGa1-xN/AlN量子阱,通过数值自洽求解薛定谔方程和泊松方程,获得二维电子气中电子的本征态和本征能级.利用雷-丁平衡方程,讨论该体系中界面光学声子对电子迁移率的影响.在计算中,对AlxGa1-xN中的体纵声子采用修正的无序元素等位移(MREI)模型,横光学声子则分别采用线性拟合(LF)和二次多项式拟合(QMF)方法,计算获得界面声子对电子的散射作用.结果表明,用LF方法获得的电子迁移率高于用QMF方法计算的值.随着Al组分的增加,两种方法之值均逐渐单调增加,且变化趋势类似.在适当的Al组分时,两种方法得到的电子迁移率都存在极值点.
Related Articles
No related articles found