Dielectric Properties, Relaxor Behavior and Crystal Chemistry Properties of B0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3 Ceramics
Author(s): PENG Yong, DING Shi-Hua, SONG Tian-Xiu, WANG Jiu-Shi, XU Qin, WU Xiao-Liang
Pages: 1400-1406
Year: 2013 Issue: 7
Journal: Chinese Journal of Inorganic Chemistry
Keyword: Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3 ceramics; dielectric relaxation; defect dipoles; crystal chemistry;
Abstract: 采用固相合成法,Bi3+作施主掺杂A位,Cu2+作受主掺杂B位,制备了Ba0.98Bi0.02(Ti0.9Zr0.1)1-XCuxO3(x=0,0.01,0.02,0.03)陶瓷样品.借助XRD、LCR等研究了该陶瓷的结构与介电性能.结果表明:当x=0.03时,陶瓷样品出现第二相.通过GULP模拟,缺陷偶极子的稳定性从低到高依次为:[2BiBa +V"Ba]、[2BiBa +Cu"Ti/Zr]、[Cu"+V0],结合实验可知:介电弛豫程度与晶体中缺陷偶极子的存在形式相关,其中x=0.01时,晶体中以[2BiBa +CuTi/Zr]为主.随Cu2+掺杂量的增加,介电常数增加,介电常数与B位键价和呈反比变化、与八面体B06的体积呈正比变化.
Pages: 1400-1406
Year: 2013 Issue: 7
Journal: Chinese Journal of Inorganic Chemistry
Keyword: Ba0.98Bi0.02(Ti0.9Zr0.1)1-xCuxO3 ceramics; dielectric relaxation; defect dipoles; crystal chemistry;
Abstract: 采用固相合成法,Bi3+作施主掺杂A位,Cu2+作受主掺杂B位,制备了Ba0.98Bi0.02(Ti0.9Zr0.1)1-XCuxO3(x=0,0.01,0.02,0.03)陶瓷样品.借助XRD、LCR等研究了该陶瓷的结构与介电性能.结果表明:当x=0.03时,陶瓷样品出现第二相.通过GULP模拟,缺陷偶极子的稳定性从低到高依次为:[2BiBa +V"Ba]、[2BiBa +Cu"Ti/Zr]、[Cu"+V0],结合实验可知:介电弛豫程度与晶体中缺陷偶极子的存在形式相关,其中x=0.01时,晶体中以[2BiBa +CuTi/Zr]为主.随Cu2+掺杂量的增加,介电常数增加,介电常数与B位键价和呈反比变化、与八面体B06的体积呈正比变化.
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