Author(s): Chen Xianfeng Dong Mianyu Ding Zuchang Guo Yuanyuan Zhang Shuyi
Pages: 41-43
Year: 1997 Issue:  6
Journal: Optical Technique
Keyword:  semiconduct material; photo thermal technique; thermal diffusivity.;
Abstract: Aimed at the present methods of measuring dopant vertical distribution in semiconductors, such as C V method, electric chemistry method etc, which will dectruct or contaminate the semiconductor material, we put forward an undestructive method, the photo thermal technique. Based on the experiment data, which is obtained under the room temperature, we calculate the thermal diffusivities of different layers in GaP∶N material. The result shows that the thermal conductivity of semiconductor decreases while the dopant density increases. This acords to the conclusion drawn from measuring single layer semiconductor material through photo thermal technique. It makes possible to measure the dopant distribution in the verticle direction of the sample. The effect of the variation in crystallinity between adjacent layers on the photothermal signal amplitude is discussed in the paper.