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pecvd sic bao mo de aes yan jiu
Author(s): 
Pages: 189-192
Year: Issue:  3
Journal: Vacuum Science and Technology

Keyword:  碳化硅薄膜俄歇电子能谱非晶半导体薄膜深度剖析俄歇谱制备条件淀积条件气体流量比单晶硅背景真空度;
Abstract: 本文介绍用俄歇电子能谱对等离子增强化学气相淀积非晶碳化硅薄膜进行组分的定量分析、深度剖析和元素的化学状态分析;不同制备条件下非晶碳化硅薄膜的一些淀积规律和工艺中的问题,并利用SiLVV和C KLL俄歇谱探讨非晶碳化硅的特征和硅、碳的化学状态。
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