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gui chen di shang dan hua gui mo de ying li yan jiu
Author(s): 
Pages: 405-408
Year: Issue:  6
Journal: Vacuum Science and Technology

Keyword:  等离子增强化学气相淀积阶梯张应力氮化硅膜硅衬底介电常数热膨胀系数界面应力覆盖特性导热性能;
Abstract: <正> 一、引言等离子增强化学气相淀积的SiN膜,具有硬度高、介电常数大、结构致密、化学稳定性好、导热性能好、对Na~+有很强的阻挡能力和在平面工艺中的阶梯覆盖特性好等优点。但是它也有很大的不足,SiN的热膨胀系数与Si相差较多,界面应力过大,特别在膜较厚时更为明显,常常引起膜的破裂。从而导致工艺失败或器件失散。实践表明,几乎所有的膜内部都存在着巨大的应力,它严重地影响着器件的可靠性和稳定性。
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