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sio2/si3n4/sio2/si duo ceng jie gou jue yuan cai liao zai e xie fen xi zhong de dian zi shu he li zi shu fu zhao xiao ying
Author(s): 
Pages: 408-412
Year: Issue:  5
Journal: Vacuum Science and Technology

Keyword:  电子束能量多层结构束流密度离子束辐照效应电子辐照效应工艺制备俄歇电子谱电子束辐照离子束效应离子溅射;
Abstract: During Auger depth profile analysis of SiO_2/Si_3N_4/SiO_2/Si multilayer dielectrics, an erroneous result was usually given by creating about several nm thick nitrogen rich additional layer at the SiO_2/Si interface. The results of the present study show that the production of the layer correlates to theion beam and electron beam irradiation. Reduction of the electron beam current density leads to diminution or disapperance of the additional layer. Finally, the production and avoidance of the arteface is discussed.
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