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ju yu dian zi tai mi du de e xie dian zi pu fen xi
Author(s): 
Pages: 297-303
Year: Issue:  5
Journal: Vacuum Science and Technology

Keyword:  Auger lineshapeFactor analysisTransference of the valence chargeLocal density of states(LDOS);
Abstract: 采集GaAs/Si界面的各个深度剖面的俄歇线形(Augerlineshape),试图获得局域态密度变化的信息。俄歇信号经过小心处理和一系列修正以消除失真,同时俄歇线形分析藉助因子分析(factoranalysis)来进行。发现在界面中两种化学态并存,某些Si原子与As原子健合,并且每个Si原子将有0.3个p电子转移至As原子上,而其他Si原子保持纯Si元素的Si-Si键。由于Si-As成键而使Si的价带顶稍稍位移,局域态密度(LDOS)幅值明显下降。
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