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zai gaas(100) chen di shang li hua tuan shu wai yan znse dan jing bao mo
Author(s): 
Pages: 405-410
Year: Issue:  6
Journal: Vacuum Science and Technology

Keyword:  硒化锌薄膜沉积外延离化团束;
Abstract: ZnSe是一种理想的蓝紫色发光材料,用于制作发光器件有较大的应用前景,采用单源喷发、离化原子团束(ICB)技术在GaAs(100)上外延ZnSe单晶薄膜,并用电子能谱分析了外延薄膜的成分。用X射线衍射和RHEED研究了外延ZnSe单晶薄膜结构和外延质量。研究了淀积能量和衬底温度对薄膜质量的影响。得到了摆动曲线半高宽为133rad·s,并具有原子水平平整程度的ZnSe(100)单晶薄膜。外延薄膜存在0.2~0.4μm的应变过渡层,过渡层随淀积能量的增大而变薄。
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