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64k dram duo jing gui tiao kuan kong zhi ji gao xuan ze xing ji shu
Author(s): 
Pages: 402-404
Year: Issue:  6
Journal: Vacuum Science and Technology

Keyword:  双层多晶硅层厚度关系曲线元件超大规模集成电路结构高选择性随机存贮器平坦化技术条宽;
Abstract: <正> 一、引言64K DRAM-CM4864(64K动态随机存贮器)是目前国内集成度最高、线条最窄的超大规模集成电路(VLSJ)。在芯片面积为(3.93×7.56)mm2上集成了15万多个元件。它采用了双层多晶硅结构、SiO2/Si3N4/SO2复合栅工艺、PSG(磷硅玻璃)平坦化技术。其场氧层厚度为9500(?)、一次多晶厚度为5000(?)、二次多晶厚度为3800(?)、PSG厚度为12000(?)、Al-Si(Si含量为1.2%)厚度为10000~11000(?)。在所有这些高低不平的
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