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Issue:
pd-mos fet qing min yi
Author(s):
TU Xiangchu
,
ZHANG Ziming
,
LI Weiliang
Pages:
13
-
15+48
Year:
1984
Issue:
9
Journal:
Application of Electronic Technique
Keyword:
研制成功
;
线性化
;
开启电压
;
氢敏器件
;
氢含量
;
场效应管
;
含氢量
;
电路图
;
环境气氛
;
选择性
;
Abstract:
<正> 一、前言钯栅MOS场效应管(简称Pd-MOS FET)是一种性能优异的氢敏器件,1975年最先见于Lunstrom等人的报告我们研究室也于1979年研制成功。其氢敏机理的要点在于:Pd-MOS FET的开启电压随环境气氛含氢量的增加而下降。值得着重指出的是,此器件用于检测氢含量时显示了下列优点: (1)选择性好。它只对H
2
敏感,对不析出氢的其它气体则毫不敏感,因为它只让氢渗入。(2)氢敏性强。测试数据表明,当空气中的氢含量由0.5ppm变至5ppm时,此器件的开启电压下降量
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