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pin xing a-si tai yang dian chi zhong de jie dian chang fen bu hao jin qu kuan du he zui jia i ceng hou du de she ji yu ji suan
Author(s): 
Pages: 466-471
Year: Issue:  4
Journal: Acta Scientiarum Naturalium Universitatis Neimongol

Keyword:  非晶硅结电场耗尽区宽度最佳本征层厚度;
Abstract: 本文用自恰法严格计算了pin器件中的pi和in分离势垒区中电荷密度分布ρ(x)、电场分布ε(x)及耗尽区宽度W,然后缩小i层厚度使之部分重迭,再用电场迭加厚理算出耗尽区中的电场分布,在此基础上根据全收集条件δgminfτpεmin算出最佳i层厚度Xe,发现当i层的费米能Ef向Ei靠近和gmin下降时,引起W和Xc显著增大
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