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Development Status of InAs/(In)GaSb Ⅱ-Type Super-Lattice Infrared Detector
Author(s): 
Pages: 621-626
Year: Issue:  11
Journal: INFRARED TECHNOLOGY

Keyword:  InAs/GaSbⅡ类超晶格红外探测器第三代焦平面;
Abstract: InAs/GaSb Ⅱ类超晶格具有优越的材料性能,量子效率高,暗电流小,能带结构可调,在国际上被认为是第三代红外焦平面探测器的优选材料.对目前Ⅱ类超晶格红外焦平面在国外的发展状况、现有的材料技术、探测器技术以及潜在的应用进行了介绍,旨在尽快发展属于我国的第三代InAs/(In)GaSb Ⅱ类超晶格红外探测器技术.
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