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a-si:h/a-si1-x:gex:h pin er zhong jie tai yang dian chi de she ji yu ji suan
Author(s): 
Pages: 459-465
Year: Issue:  4
Journal: Acta Scientiarum Naturalium Universitatis Neimongol

Keyword:  非晶硅单结和二重结太阳电池;
Abstract: 本文根据a-Si材料的性能参数,计算了pin器件中的结电场分布ε(x)及其极小值εmin,求出在一定条件下的满足全收集的最佳(大)i层厚度,并在这个基础上较严格地计算了Eg1=1.9eV的a-Si:H和Eg2=1.5eV的a-Si:Ge:H两种材料的pin单结太阳电池及由它们组成的二重结器件的光伏特性,在条件相近的条件下,a-Si:Ge:H pin单结太阳电池的效率与Mitchell的实驻结果相当接近。我们的二重结计算结果与DMM在相近条件下估算的结果接近。
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